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Strategic Elements backs new CSIRO testing code to fast-track Nanocube development

Nanocube memory ink is a material under development to be printed or coated onto non-silicon transparent or flexible surfaces (e.g. glass, plastic) to store/retrieve data.
Nanocube memory ink
Nanocube memory ink

Strategic Elements Ltd (ASX:SOR) has signed an agreement with the University of New South Wales (UNSW) to optimise a flexible, transparent Nanocube memory ink and showcase the technology through demonstrator applications.

The agreement was facilitated by a recent breakthrough at the CSIRO laboratories in Melbourne where device engineers greatly enhanced the rate of measurement of Nanocube Ink memory cells by developing a semi-autonomous testing code.

This is expected to significantly enhance the ability for UNSW to optimise the ink during the program.

UNSW development

The specific aim of the UNSW agreement is to further optimise the Nanocube Memory Ink specifically for flexible and transparent materials and develop demonstrator applications utilising the optimised flexible memory ink system.

UNSW will begin by assessing potential demonstrator applications in the area of multifunctional sensors and/or memory arrays.

• Multi-functional capacitive sensors can detect the type and strength of external stimuli including curvature, pressure, strain, and touch with clear distinction.

• Demand for different forms of memory storage is being driven by IoT (Internet of Things), edge computing and embedded intelligence. Instead of sending data to the cloud, there will be a requirement for local data storage on flexible sensors, tags, wearables and high-value consumer packaging.

READ: Strategic Elements secures government funding to develop memory ink devices with CSIRO

With the objective to speed up the development and testing of Nanocube RRAM (resistive random access memory) devices, CSIRO device engineers have greatly enhanced the rate of device measurement by using semi-autonomous testing code.

Conventional measurement techniques are typically suited to transistor components and other bespoke electrical devices.

Consequently, testing of RRAM prototypes has been time consuming and to date reduced overall program output.

CSIRO engineers have improved upon this approach significantly by introducing semi-autonomous code that more accurately reflects the pulse switching nature of RRAM memory in the Memory Ink.

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