Weebit Nano Ltd (ASX:WBT) chief executive Coby Hanoch explains to Proactive Investors the company's revolutionary computer memory storage technology, invented by Professor James Tour of Rice University, and details recent milestones hit on the road to commercialisation.
In collaboration with French technology research institute Leti, the semiconductor company is developing silicon oxide-based non-volatile memory technology, known as SiOx ReRAM, that is considered by many to be the likely successor to Flash Memory Technology.
In a major achievement that came on schedule, a 40nm thick 1Mb capacity array has been effectively demonstrated. In the coming year, a number of technical parameters will be optimised, then the transition to a production fab will begin. "The plan is to reach revenues in 2021," confirms Hanoch, and in the meantime discussions with potential Tier 1 consumers of the technology will steer towards early adopter arrangements.